FDR842P Datasheet, Fairchild Semiconductor

*
  –11 A,
  –12 V RDS(ON) = 9 mΩ @ VGS =
  –4.5 V RDS(ON) = 12 mΩ @ VGS =
  –2.5 V RDS(ON) = 16 mΩ @ VGS =

Features
*
  –11 A,
  –12 V RDS(ON) = 9 mΩ @ VGS =
  –4.5 V RDS(ON) = 12.

This P-Channel
  –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features
*
  –11 A,
  –12 V RDS(ON) = 9.

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